1/8 target data july 2003 this is preliminary information on a new product forseen to be developped. details are subject to change without notice stb135n10 STP135N10 n-channel 100v - 0.007 w - 135a d2pak/to-220 low gate charge stripfet? power mosfet n typical r ds (on) = 0.007 w n exceptional dv/dt capability n 100% avalanche tested n surface-mounting d 2 pak (to-263) power package in tube (no suffix) or in tape & reel (suffix t4) description this mosfet is the result of stmicroelectronics's well established and consolidated stripfet technology utiliz- ing the most recent layout optimization. the device exhib- its extremely low on-resistance, gate charge and diode's reverse recovery charge qrr making it the ideal switch in a very large spectrum of applications such as automotive, consumer, telecom and industrial. applications n primary switch in telecom dc-dc converter n high-efficiency dc-dc converters n 42v automotive applications n synchronous rectification n diesel injection n pwm ups and motor control type v dss r ds(on) i d stb135n10 STP135N10 100 v 100 v <0.009 w <0.009 w 135 a (*) 135 a (*) internal schematic diagram absolute maximum ratings (1) pulse width limited by safe operating area. (*) value limited by wire bonding (2) i sd 40a, di/dt 600a/s, v dd b vdss , t j t jmax. (3) starting t j = 25 o c, i d = 40a, v dd = 50v symbol parameter value unit v ds drain-source voltage (v gs = 0) 100 v v dgr drain-gate voltage (r gs = 20 k w ) 100 v v gs gate- source voltage 20 v i d (*) drain current (continuous) at t c = 25c 135 a i d drain current (continuous) at t c = 100c 96 a i dm (1) drain current (pulsed) 540 a p tot total dissipation at t c = 25c 150 w derating factor 1 w/c dv/dt (2) peak diode recovery voltage slope tbd v/ns e as (3) single pulse avalanche energy tbd mj t stg storage temperature -55 to 175 c t j operating junction temperature 1 2 3 to-220 1 3 d 2 pak to-263 (suffix t4)
stb135n10 STP135N10 2/8 thermal data electrical characteristics (t case = 25 c unless otherwise specified) off on (5 ) dynamic rthj-case rthj-amb t l thermal resistance junction-case thermal resistance junction-ambient maximum lead temperature for soldering purpose max max 1 62.5 300 c/w c/w c symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 100 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating t c = 125c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20v 100 na symbol parameter test conditions min. typ. max. unit v gs(th) gate threshold voltage v ds = v gs i d = 250 a 24v r ds(on) static drain-source on resistance v gs = 10 v i d = 67.5 a 0.007 0.009 w symbol parameter test conditions min. typ. max. unit g fs (5) forward transconductance v ds = 25 v i d = 67.5 a tbd s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25v f = 1 mhz v gs = 0 6350 890 250 pf pf pf
3/8 stb135n10 STP135N10 switching on switching off source drain diode (1 ) pulse width limited by safe operating area. (5) pulsed: pulse duration = 300 s, duty cycle 1.5 %. symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 50 v i d = 67.5 a r g = 4.7 w v gs = 10 v (resistive load, figure 3) tbd tbd ns ns q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 50 v i d = 135 a v gs = 5 v tbd tbd tbd 95 nc nc nc symbol parameter test conditions min. typ. max. unit t d(off) t f turn-off delay time fall time v dd = 50 v i d = 67.5 a r g = 4.7 w, v gs = 10 v (resistive load, figure 3) tbd tbd ns ns symbol parameter test conditions min. typ. max. unit i sd i sdm (1) source-drain current source-drain current (pulsed) 135 540 a a v sd (5) forward on voltage i sd = 135 a v gs = 0 1.3 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 135 a di/dt = 100a/s v dd = 25 v t j = 150c (see test circuit, figure 5) tbd tbd tbd ns m c a electrical characteristics (continued)
stb135n10 STP135N10 4/8 fig. 1: unclamped inductive load test circuit fig. 1: unclamped inductive load test circuit fig. 2: unclamped inductive waveform fig. 3: switching times test circuits for resistive load fig. 4: gate charge test circuit fig. 5: test circuit for inductive load switching and diode recovery times
5/8 stb135n10 STP135N10 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 a1 2.49 2.69 0.098 0.106 a2 0.03 0.23 0.001 0.009 b 0.7 0.93 0.028 0.037 b2 1.14 1.7 0.045 0.067 c 0.45 0.6 0.018 0.024 c2 1.21 1.36 0.048 0.054 d 8.95 9.35 0.352 0.368 d1 8 0.315 e 10 10.4 0.394 0.409 e1 8.5 0.334 g 4.88 5.28 0.192 0.208 l 15 15.85 0.591 0.624 l2 1.27 1.4 0.050 0.055 l3 1.4 1.75 0.055 0.069 m 2.4 3.2 0.094 0.126 r 0.4 0.015 v2 0 8 0 8 d 2 pak mechanical data
stb135n10 STP135N10 6/8 dim. mm. inch. min. typ. max. min. typ. typ. a 4.4 4.6 0.173 0.181 c 1.23 1.32 0.048 0.051 d 2.40 2.72 0.094 0.107 e 0.49 0.70 0.019 0.027 f 0.61 0.88 0.024 0.034 f1 1.14 1.70 0.044 0.067 f2 1.14 1.70 0.044 0.067 g 4.95 5.15 0.194 0.203 g1 2.40 2.70 0.094 0.106 h2 10 10.40 0.393 0.409 l2 16.40 0.645 l3 28.90 1.137 l4 13 14 0.511 0.551 l5 2.65 2.95 0.104 0.116 l6 15.25 15.75 0.600 0.620 l7 6.20 6.60 0.244 0.260 l9 3.50 3.93 0.137 0.154 dia 3.75 3.85 0.147 0.151 to-220 mechanical data
7/8 stb135n10 STP135N10 dim. mm inch min. max. min. max. a0 10.5 10.7 0.413 0.421 b0 15.7 15.9 0.618 0.626 d 1.5 1.6 0.059 0.063 d1 1.59 1.61 0.062 0.063 e 1.65 1.85 0.065 0.073 f 11.4 11.6 0.449 0.456 k0 4.8 5.0 0.189 0.197 p0 3.9 4.1 0.153 0.161 p1 11.9 12.1 0.468 0.476 p2 1.9 2.1 0075 0.082 r50 1.574 t 0.25 0.35 .0.0098 0.0137 w 23.7 24.3 0.933 0.956 dim. mm inch min. max. min. max. a 330 12.992 b 1.5 0.059 c 12.8 13.2 0.504 0.520 d 20.2 0.795 g 24.4 26.4 0.960 1.039 n 100 3.937 t 30.4 1.197 base qty bulk qty 1000 1000 reel mechanical data * on sales type tube shipment (no suffix)* tape and reel shipment (suffix t4)* d 2 pak footprint tape mechanical data
stb135n10 STP135N10 8/8 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2003 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malt a - morocco - singapore - spain - sweden - switzerland - united kingdom - united states. http://www.st.com
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